N-Channel MOSFET, designed for small signal applications, features a 100V Drain to Source Breakdown Voltage and 100V Drain to Source Voltage (Vdss). This surface mount device offers a low Drain-source On Resistance of 34mR (Rds On Max) and a continuous drain current capability of 6.9A. Operating within a temperature range of -55°C to 175°C, it boasts fast switching characteristics with a 16ns turn-on delay and 10ns fall time. The component is housed in an SO package, is RoHS compliant, and supports a maximum power dissipation of 1.8W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4484EY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
6.9A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
34mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
34mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.8W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
34mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
35ns
Turn-On Delay Time
16ns
DC Rated Voltage
100V
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4484EY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4484EY-T1-E3 to view detailed technical specifications.
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