P-channel JFET with 30V drain-source voltage and 5.9A continuous drain current. Features low 35mΩ drain-source resistance and 42mΩ max Rds(on). Operates from -55°C to 150°C with 5W max power dissipation. Surface mountable in an 8-pin SO package, this silicon FET offers 8ns turn-on and 18ns turn-off delay times.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power2.4W
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Technical Specifications
Vishay SI4485DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
5.9A
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
42mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
590pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Nominal Vgs
-1.2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.4W
Radiation Hardening
No
Rds On Max
42mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
18ns
Turn-On Delay Time
8ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4485DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4485DY-T1-GE3 to view detailed technical specifications.
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