N-Channel MOSFET, 150V Drain to Source Voltage (Vdss), 3.5A Continuous Drain Current (ID). Features low on-resistance of 50mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.56W. Packaged in SO, this RoHS compliant component offers fast switching with turn-on delay time of 12ns and fall time of 7ns.
PackageSO
Resistance0.041R
PolarityN-CHANNEL
Power1.56W
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Technical Specifications
Vishay SI4488DY-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
3.5A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
50mR
Drain to Source Voltage (Vdss)
150V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.56W
Number of Channels
1
Package Quantity
100
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1.56W
Resistance
0.041R
RoHS Compliant
Yes
Series
SI4
Turn-Off Delay Time
22ns
Turn-On Delay Time
12ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4488DY-E3 Datasheet
Download the complete datasheet for Vishay SI4488DY-E3 to view detailed technical specifications.
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