N-channel, small-signal MOSFET for general-purpose applications. Features a 150V drain-source voltage (Vdss) and a continuous drain current (ID) of 3.5A. Offers a low drain-source on-resistance (Rds On) of 50mR. Operates within a temperature range of -55°C to 150°C. Packaged in an 8-pin SO (SOP) surface-mount package, this RoHS-compliant component boasts fast switching times with a turn-on delay of 12ns and a fall time of 7ns.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.56W
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Technical Specifications
Vishay SI4488DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
3.5A
Drain to Source Resistance
50mR
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
50mR
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.56W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.56W
Radiation Hardening
No
Rds On Max
50mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
22ns
Turn-On Delay Time
12ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4488DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4488DY-T1-E3 to view detailed technical specifications.
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