MOSFET; SOIC8 150V N-Channel Trench
PackageSO
MountingSurface Mount
PolarityN
Power1.4W
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Technical Specifications
Vishay SI4488DY-T1-E3/BKN technical specifications.
General
| Package/Case | SO |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 500mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.061inch |
| Length | 0.196inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Polarization | N |
| Power Dissipation | 1.4W |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 18ns |
| Width | 0.157inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4488DY-T1-E3/BKN Datasheet
Download the complete datasheet for Vishay SI4488DY-T1-E3/BKN to view detailed technical specifications.
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