N-CHANNEL MOSFET, 150V Drain-Source Voltage (Vdss), 3.5A Continuous Drain Current (ID), and 50mΩ Drain-Source Resistance (Rds On Max). This surface-mount component features a 2V Threshold Voltage and a 10ns Fall Time, with Turn-On and Turn-Off Delay Times of 12ns and 22ns respectively. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.56W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4488DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
3.5A
Drain to Source Resistance
50mR
Drain to Source Voltage (Vdss)
150V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.56W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
50mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
22ns
Turn-On Delay Time
12ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI4488DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4488DY-T1-GE3 to view detailed technical specifications.
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