N-CHANNEL MOSFET, 150V Drain-Source Voltage (Vdss), 3.5A Continuous Drain Current (ID), and 50mΩ Drain-Source Resistance (Rds On Max). This surface-mount component features a 2V Threshold Voltage and a 10ns Fall Time, with Turn-On and Turn-Off Delay Times of 12ns and 22ns respectively. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.56W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4488DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4488DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4488DY-T1-GE3 to view detailed technical specifications.
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