N-channel MOSFET, TrenchFET® series, designed for general-purpose small signal applications. Features a continuous drain current of 2.85A and a drain-to-source voltage of 200V. Offers a low drain-source on-resistance (Rds On) of 80mR. Packaged in a compact SOP-8 surface-mount package, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4490DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 2.85A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 80mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4490DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4490DY-T1-GE3 to view detailed technical specifications.
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