N-channel MOSFET, TrenchFET® series, designed for general-purpose small signal applications. Features a continuous drain current of 2.85A and a drain-to-source voltage of 200V. Offers a low drain-source on-resistance (Rds On) of 80mR. Packaged in a compact SOP-8 surface-mount package, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4490DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
2.85A
Drain to Source Resistance
80mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
80mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.56W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
80mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
32ns
Turn-On Delay Time
14ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4490DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4490DY-T1-GE3 to view detailed technical specifications.
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