The SI4493DY-T1-E3 is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 10A and a drain to source breakdown voltage of 20V. The device is packaged in a SO package and is designed for surface mount applications. It is RoHS compliant and has a maximum power dissipation of 1.5W.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI4493DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 7.75mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 150ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 7.75mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 220ns |
| Turn-On Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4493DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4493DY-T1-E3 to view detailed technical specifications.
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