The SI4511DY-T1-GE3 is a dual N-CHANNEL, P-CHANNEL TrenchFET JFET from Vishay, featuring a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 1.1W and is packaged in a surface mount SOIC package. The device is RoHS compliant and has a threshold voltage of 600mV. It can handle a continuous drain current of up to 7.2A and has a drain to source resistance of 22mR.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI4511DY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 14.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 600mV |
| Weight | 0.006596oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4511DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4511DY-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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