Surface mount N-channel and P-channel JFET with 30V drain-source voltage and 6A continuous drain current. Features include a 1V threshold voltage, 89mR maximum drain-source on-resistance, and 305pF input capacitance. Operates across a -55°C to 150°C temperature range with 2.78W maximum power dissipation. This 2-element device is packaged in a SOIC case and is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power1.78W
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Technical Specifications
Vishay SI4532CDY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6A
Drain to Source Resistance
73mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
89mR
Fall Time
7.7ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
305pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.78W
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
2
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Power Dissipation
1.78W
Radiation Hardening
No
Rds On Max
47mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
17ns
Turn-On Delay Time
5.5ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4532CDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4532CDY-T1-GE3 to view detailed technical specifications.
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