The SI4532DY-E3 is a dual N-channel/P-channel MOSFET from Vishay, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.9A and a drain to source voltage of 30V. The device is packaged in a SO package and is RoHS compliant. It has a fall time of 8ns and a turn-off delay time of 14ns, making it suitable for high-frequency applications.
PackageSO
PolarityN-CHANNEL, P-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI4532DY-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Channels | 2 |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL, P-CHANNEL |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4532DY-E3 Datasheet
Download the complete datasheet for Vishay SI4532DY-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
