N-channel and P-channel MOSFET transistor in SOIC package, featuring 30V drain-to-source breakdown voltage and 6.9A continuous drain current. Offers low on-state resistance of 32mR at 10V, with a 2W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C, with fast switching times including 10ns turn-on delay and 25ns fall time. This surface-mount device is designed for efficient power management applications.
PackageSOIC
Current Rating7A
PolarityN-CHANNEL, P-CHANNEL
Power2W
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Technical Specifications
Vishay SI4542DY technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6.9A
Current Rating
7A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
32mR
Drain to Source Voltage (Vdss)
30V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Dual Supply Voltage
30V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Nominal Vgs
1V
Number of Channels
2
On-State Resistance
25mR
Package Quantity
100
Polarity
N-CHANNEL, P-CHANNEL
Power Dissipation
2W
Reach SVHC Compliant
No
RoHS Compliant
No
Series
SI4
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
55ns
Turn-On Delay Time
10ns
DC Rated Voltage
30V
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI4542DY Datasheet
Download the complete datasheet for Vishay SI4542DY to view detailed technical specifications.
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