VISHAY

SI4542DY

Datasheet

Vishay

SI4542DY

Name: SI4542DY Vishay
Brand: Vishay
SKU: SI4542DY

30V 7A N/P-CH MOSFET SOIC 2-CH 2W 32mR

N-channel and P-channel MOSFET transistor in SOIC package, featuring 30V drain-to-source breakdown voltage and 6.9A continuous drain current. Offers low on-state resistance of 32mR at 10V, with a 2W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C, with fast switching times including 10ns turn-on delay and 25ns fall time. This surface-mount device is designed for efficient power management applications.

PackageSOIC

Current Rating7A

PolarityN-CHANNEL, P-CHANNEL

Power2W

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Technical Specifications

Vishay SI4542DY technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	6.9A
Current Rating	7A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	32mR
Drain to Source Voltage (Vdss)	30V
Fall Time	25ns
Gate to Source Voltage (Vgs)	20V
Height	1.55mm
Lead Free	Lead Free
Length	5mm
Max Dual Supply Voltage	30V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2W
Nominal Vgs	1V
Number of Channels	2
On-State Resistance	25mR
Package Quantity	100
Polarity	N-CHANNEL, P-CHANNEL
Power Dissipation	2W
Reach SVHC Compliant	No
RoHS Compliant	No
Series	SI4
Termination	SMD/SMT
Threshold Voltage	1V
Turn-Off Delay Time	55ns
Turn-On Delay Time	10ns
DC Rated Voltage	30V
Weight	0.006596oz
Width	4mm