N/P-Channel MOSFET pair designed for surface mount applications. Features a 30V drain-to-source breakdown voltage and 32mΩ drain-to-source resistance. Continuous drain current is 6.9A with a maximum power dissipation of 2W. Operates across a temperature range of -55°C to 150°C. Packaged in SOIC for tape and reel distribution.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power2W
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Technical Specifications
Vishay SI4542DY-T1 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | SI4 |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay SI4542DY-T1 Datasheet
Download the complete datasheet for Vishay SI4542DY-T1 to view detailed technical specifications.
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