Dual N-channel and P-channel MOSFET, surface mount, 60V drain-source breakdown voltage, 3.9A continuous drain current, and 58mΩ on-state resistance. Features include 120mΩ max drain-source on-resistance, 20V gate-source voltage, and 150°C max operating temperature. This RoHS compliant component is packaged in an 8-SOIC case with tape and reel packaging.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL, N-CHANNEL
Power2W
Quick Jump:
Technical Specifications
Vishay SI4559ADY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
3.9A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
120mR
Dual Supply Voltage
60V
Fall Time
30ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
665pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
On-State Resistance
58mR
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL, N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
58mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
40ns
Turn-On Delay Time
30ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4559ADY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4559ADY-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.