N-channel and P-channel MOSFET with 60V drain-source breakdown voltage. Features 4.5A continuous drain current and a maximum on-resistance of 120mR. Surface mountable in an SO package, this component offers fast switching with turn-on delay of 8ns and fall time of 35ns. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 2.4W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI4559EY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 120mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4559EY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4559EY-T1-E3 to view detailed technical specifications.
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