N-channel and P-channel MOSFET with 40V drain-to-source voltage and 7.2A continuous drain current. Features low 35mΩ drain-to-source resistance and 3.3W maximum power dissipation. Operates from -55°C to 150°C, with a 20V gate-to-source voltage. Packaged in an 8-SOIC surface-mount case, this component is RoHS compliant and supplied on tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI4561DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 14ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 640pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.3W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Rds On Max | 35.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 49ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4561DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4561DY-T1-E3 to view detailed technical specifications.
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