SI4561DY-T1-GE3

MOSFET N/P-Ch MOSFET 40V 35/35mohm @ 10V

PackageSOIC

MountingSurface Mount

PolarityP-CHANNEL

Power2W

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Vishay SI4561DY-T1-GE3 technical specifications.

Package/Case	SOIC
Continuous Drain Current (ID)	7.2A
Drain to Source Breakdown Voltage	40V
Drain to Source Resistance	35mR
Drain to Source Voltage (Vdss)	40V
Fall Time	14ns
FET Type	N and P-Channel
Gate to Source Voltage (Vgs)	20V
Input Capacitance	640pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.3W
Mount	Surface Mount
Package Quantity	1
Packaging	Tape and Reel
Polarity	P-CHANNEL
Power Dissipation	2W
Rds On Max	35.5mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	36ns