VISHAY

SI4563DY-T1-E3

Datasheet

N/P-Channel JFET, 40V, 8A, 2-Ch, SO, Surface Mount

Vishay

SI4563DY-T1-E3

Name: SI4563DY-T1-E3 Vishay
Brand: Vishay
SKU: SI4563DY-T1-E3

N/P-Channel JFET, 40V, 8A, 2-Ch, SO, Surface Mount

N-Channel and P-Channel Silicon FET, 2-Element, Surface Mount, SOP-8 package. Features 40V Drain to Source Voltage (Vdss), 8A Continuous Drain Current (ID), and low Drain-source On Resistance (Rds On) up to 16mR. Operates from -55°C to 150°C with a 2W Max Power Dissipation. Includes 69ns Fall Time and 33ns Turn-On Delay Time. RoHS compliant.

PackageSO

MountingSurface Mount

PolarityN-CHANNEL, P-CHANNEL

Quick Jump:

Technical Specifications

Vishay SI4563DY-T1-E3 technical specifications.

General

Package/Case	SO
Continuous Drain Current (ID)	8A
Drain to Source Resistance	20mR
Drain to Source Voltage (Vdss)	40V
Drain-source On Resistance-Max	25mR
Fall Time	69ns
FET Type	N and P-Channel
Gate to Source Voltage (Vgs)	16V
Height	1.55mm
Input Capacitance	2.39nF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2W
Mount	Surface Mount
Number of Channels	2
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL, P-CHANNEL
Rds On Max	16mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Series	TrenchFET®
Threshold Voltage	2V
Turn-Off Delay Time	80ns
Turn-On Delay Time	33ns
Weight	0.006596oz
Width	4mm