N-Channel and P-Channel Silicon FET, 2-Element, Surface Mount, SOP-8 package. Features 40V Drain to Source Voltage (Vdss), 8A Continuous Drain Current (ID), and low Drain-source On Resistance (Rds On) up to 16mR. Operates from -55°C to 150°C with a 2W Max Power Dissipation. Includes 69ns Fall Time and 33ns Turn-On Delay Time. RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI4563DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8A
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
25mR
Fall Time
69ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
16V
Height
1.55mm
Input Capacitance
2.39nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Rds On Max
16mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
80ns
Turn-On Delay Time
33ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4563DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4563DY-T1-E3 to view detailed technical specifications.
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