SI4563DY-T1-GE3

N/P-CH MOSFET 40V 8A 16mR SOIC Surface Mount

N-channel and P-channel MOSFET with 40V drain-to-source voltage and 8A continuous drain current. Features low 16mΩ drain-to-source resistance and 2W maximum power dissipation. Operates across a -55°C to 150°C temperature range, with surface-mount SO package for efficient integration. Includes fast switching times with turn-on delay of 33ns and fall time of 69ns.

PackageSO

MountingSurface Mount

PolarityN-CHANNEL, P-CHANNEL

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Technical Specifications

Vishay SI4563DY-T1-GE3 technical specifications.

General

Package/Case	SO
Continuous Drain Current (ID)	8A
Drain to Source Resistance	16mR
Drain to Source Voltage (Vdss)	40V
Fall Time	69ns
FET Type	N and P-Channel
Gate to Source Voltage (Vgs)	16V
Height	1.55mm
Input Capacitance	2.39nF
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2W
Mount	Surface Mount
Nominal Vgs	2V
Number of Channels	2
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL, P-CHANNEL
Radiation Hardening	No
Rds On Max	16mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	75ns
Turn-On Delay Time	33ns
Weight	0.006596oz
Width	4mm