N and P-Channel Dual MOSFET, Surface Mount, SOIC package. Features 40V Drain-Source Voltage (Vdss), 10A Continuous Drain Current (ID), and low 17.5mΩ Drain-to-Source On-Resistance (Rds On Max). Operates with a Gate-to-Source Voltage (Vgs) of 20V and a nominal threshold voltage of 800mV. Offers fast switching with a 15ns fall time and 42ns turn-on delay. Maximum power dissipation is 3.2W, with operating temperatures from -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI4564DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
10A
Drain to Source Resistance
17.5mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
21mR
Fall Time
15ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
855pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Nominal Vgs
800mV
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
17.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
800mV
Turn-Off Delay Time
40ns
Turn-On Delay Time
42ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI4564DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4564DY-T1-GE3 to view detailed technical specifications.
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