N and P-Channel Dual MOSFET, Surface Mount, SOIC package. Features 40V Drain-Source Voltage (Vdss), 10A Continuous Drain Current (ID), and low 17.5mΩ Drain-to-Source On-Resistance (Rds On Max). Operates with a Gate-to-Source Voltage (Vgs) of 20V and a nominal threshold voltage of 800mV. Offers fast switching with a 15ns fall time and 42ns turn-on delay. Maximum power dissipation is 3.2W, with operating temperatures from -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI4564DY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 17.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 21mR |
| Fall Time | 15ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 855pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 17.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 42ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4564DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4564DY-T1-GE3 to view detailed technical specifications.
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