Vishay SI4565ADY-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 54mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 39mR |
| Fall Time | 56ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 625pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Rds On Max | 39mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 21ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI4565ADY-T1-E3 to view detailed technical specifications.
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