N and P-Channel MOSFET transistor for general applications, featuring a 40V drain-to-source voltage and 5.6A continuous drain current. Surface mountable in an 8-SOIC package, this component offers a low 39mR Rds On Max and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 21ns turn-on delay and 33ns turn-off delay, with an input capacitance of 625pF. Maximum power dissipation is rated at 3.1W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI4565ADY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Resistance | 54mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 56ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.55mm |
| Input Capacitance | 625pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Rds On Max | 39mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 21ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4565ADY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4565ADY-T1-GE3 to view detailed technical specifications.
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