N-channel and P-channel MOSFET with 40V Drain to Source Breakdown Voltage. Features 3.6A continuous drain current and 85mΩ maximum drain-source on-resistance. Surface mountable in a SOIC package, operating from -55°C to 150°C with 1.95W maximum power dissipation. Includes 2.2V nominal gate-source voltage and 355pF input capacitance.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.85W
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Technical Specifications
Vishay SI4567DY-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 85mR |
| Fall Time | 93ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.5mm |
| Input Capacitance | 355pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.95W |
| Mount | Surface Mount |
| Nominal Vgs | 2.2V |
| On-State Resistance | 60mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.85W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.2V |
| Turn-Off Delay Time | 19ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4567DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4567DY-T1-E3 to view detailed technical specifications.
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