Vishay
SI4590DY-T1-GE3
Small Signal Field-Effect Transistor, 5.6A I(D), 100V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Small Signal Field-Effect Transistor, 5.6A I(D), 100V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
PackageSOIC
Resistance0.183R
MountingSurface Mount
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Technical Specifications
Vishay SI4590DY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Type | N and P-Channel |
| Input Capacitance | 360pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.4W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 57mR |
| Resistance | 0.183R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4590DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4590DY-T1-GE3 to view detailed technical specifications.
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