N-Channel and P-Channel Silicon FET, Surface Mount, SOIC package. Features 40V Drain to Source Voltage (Vdss), 6.8A Continuous Drain Current (ID), and 37mR Drain to Source Resistance. Operates from -55°C to 150°C with a maximum power dissipation of 3.1W. Includes 640pF input capacitance and 1.4V threshold voltage.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI4599DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6.8A
Drain to Source Resistance
37mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
45mR
Fall Time
13ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
640pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
35.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
44ns
Weight
0.019048oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4599DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4599DY-T1-GE3 to view detailed technical specifications.
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