N-Channel and P-Channel Silicon FET, Surface Mount, SOIC package. Features 40V Drain to Source Voltage (Vdss), 6.8A Continuous Drain Current (ID), and 37mR Drain to Source Resistance. Operates from -55°C to 150°C with a maximum power dissipation of 3.1W. Includes 640pF input capacitance and 1.4V threshold voltage.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI4599DY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Resistance | 37mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 45mR |
| Fall Time | 13ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 640pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 35.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.4V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 44ns |
| Weight | 0.019048oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4599DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4599DY-T1-GE3 to view detailed technical specifications.
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