N-channel enhancement mode power MOSFET featuring dual dual drain configuration. Maximum drain-source voltage is 30V, with continuous drain current rated at 8A for channel 1 and 6.7A for channel 2. This surface-mount component is housed in an 8-pin SOIC N (SOP) package with gull-wing leads, measuring 5mm x 4mm x 1.55mm. Operating temperature range is -55°C to 150°C.
PackageSOIC N
MountingSurface Mount
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Technical Specifications
Vishay Si4622DY technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOIC N
Package Description
Small Outline IC Narrow Body
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5(Max)
Package Width (mm)
4(Max)
Package Height (mm)
1.55(Max)
Seated Plane Height (mm)
1.75(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
8@Channel 1|6.7@Channel 2A
Maximum Drain Source Resistance
16@10V@Channel 1|26.4@10V@Channel 2mOhm
Typical Gate Charge @ Vgs
Typical Gate Charge @ 10V
40@Channel 1|13.2@Channel 2nC
Typical Input Capacitance @ Vds
2458@15V@Channel 1|760@15V@Channel 2pF
Maximum Power Dissipation
2200@Channel 1|2000@Channel 2mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
No
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay Si4622DY Datasheet
Download the complete datasheet for Vishay Si4622DY to view detailed technical specifications.
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