N-Channel Silicon TrenchFET® MOSFET, surface mount, featuring 30V drain-source voltage and 21.5A continuous drain current. Offers low 3.3mΩ drain-to-source resistance (Rds On Max) and 6W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in SO-8, tape and reel, this component is halogen-free and RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4626ADY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
21.5A
Drain to Source Resistance
3.3mR
Drain to Source Voltage (Vdss)
30V
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
5.37nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3.3mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
45ns
Turn-On Delay Time
44ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4626ADY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4626ADY-T1-GE3 to view detailed technical specifications.
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