N-channel MOSFET, surface mount, 30V drain-source breakdown voltage, 17A continuous drain current, and 8.5mΩ maximum drain-source on-resistance. Features include 19ns fall time, 32ns turn-on delay, and 43ns turn-off delay. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 4.4W. Packaged in a lead-free, RoHS-compliant 8-pin SOIC package on tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
Vishay SI4636DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 12.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8.5mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 2.635nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.4W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 32ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4636DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4636DY-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
