N-channel MOSFET transistor with a 25V drain-to-source voltage and 16.5A continuous drain current. Features a low 10mΩ drain-to-source resistance and 1.145nF input capacitance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 5W. This surface-mount SOIC package component is RoHS compliant and designed for efficient switching applications.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4666DY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 16.5A |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.145nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Nominal Vgs | 600mV |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4666DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4666DY-T1-GE3 to view detailed technical specifications.
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