N-channel MOSFET, 30V Vdss, 18.2A continuous drain current, and 9.5mR Rds On. Features include 1.22nF input capacitance, 8ns fall time, 20ns turn-on delay, and 20ns turn-off delay. This surface-mount component operates from -55°C to 150°C with a 3W maximum power dissipation, housed in an 8-SOIC package.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4686DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 18.2A |
| Drain to Source Resistance | 9.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 1.22nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 9.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET®, WFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4686DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4686DY-T1-GE3 to view detailed technical specifications.
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