N-channel MOSFET, 30V Vdss, 18.2A continuous drain current, and 9.5mR Rds On. Features include 1.22nF input capacitance, 8ns fall time, 20ns turn-on delay, and 20ns turn-off delay. This surface-mount component operates from -55°C to 150°C with a 3W maximum power dissipation, housed in an 8-SOIC package.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4686DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
18.2A
Drain to Source Resistance
9.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
1.22nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
9.5mR
RoHS Compliant
Yes
Series
TrenchFET®, WFET®
Turn-Off Delay Time
20ns
Turn-On Delay Time
20ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4686DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4686DY-T1-GE3 to view detailed technical specifications.
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