N-channel JFET with 30V Drain-to-Source Voltage (Vdss) and 11mΩ Drain-to-Source Resistance (Rds On Max). Features 8.9A Continuous Drain Current (ID), 1.58nF Input Capacitance, and 10ns Fall Time. Operates from -55°C to 150°C with 1.4W Max Power Dissipation. Surface mountable in an SO package, this RoHS compliant component is ideal for small signal applications.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4688DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 8.9A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 1.58nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4688DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4688DY-T1-GE3 to view detailed technical specifications.
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