N-channel silicon JFET with 30V drain-source voltage and 6.5A continuous drain current. Features 18.5mΩ maximum drain-source on-resistance and 1.3W maximum power dissipation. Operates from -55°C to 150°C in a surface-mount SO package. Includes 7ns turn-on delay and 12ns fall time.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4800BDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
6.5A
Drain to Source Resistance
18.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
18.5mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
25V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Surface Mount
Nominal Vgs
25V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
18.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
32ns
Turn-On Delay Time
7ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4800BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4800BDY-T1-GE3 to view detailed technical specifications.
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