The SI4800DY-E3 is a single N-channel MOSFET from Vishay with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 9A and a drain to source voltage of 30V. The device is packaged in a SOIC package and is RoHS compliant. The MOSFET has a maximum power dissipation of 2.5W and a fall time of 9ns.
PackageSOIC
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI4800DY-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 18.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4800DY-E3 Datasheet
Download the complete datasheet for Vishay SI4800DY-E3 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
