PackageSOIC
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4800DY-T1 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
18.5mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
RoHS Compliant
No
Turn-Off Delay Time
22ns
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI4800DY-T1 Datasheet
Download the complete datasheet for Vishay SI4800DY-T1 to view detailed technical specifications.
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