Dual N-channel MOSFET, 30V Vdss, 5.7A continuous drain current, and 22mΩ Rds On. Features 8ns turn-on delay, 21ns turn-off delay, and 10ns fall time. Packaged in an 8-pin SOIC for surface mounting, with a maximum power dissipation of 2W. Operating temperature range from -55°C to 150°C.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power2W
Quick Jump:
Technical Specifications
Vishay SI4808DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | LITTLE FOOT® |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4808DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4808DY-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
