The SI4812BDY-T1-GE3 is a single N-channel JFET from Vishay, featuring a continuous drain current of 7.3A and a drain to source voltage of 30V. It has a maximum power dissipation of 1.4W and operates within a temperature range of -55°C to 150°C. The device is packaged in a surface mount SO package and is RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4812BDY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | LITTLE FOOT® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.006596oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4812BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4812BDY-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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