N-Channel Silicon JFET, 2-Element, Surface Mount device with 30V Drain-to-Source Voltage (Vdss) and 5.8A Continuous Drain Current (ID). Features include a 3V Threshold Voltage, 18.5mR Max Drain-Source On-Resistance, and 9.3mR Drain to Source Resistance. Operates from -55°C to 150°C with 1.25W Max Power Dissipation. Packaged in SO (SOP-8) for tape and reel, this device is HALOGEN FREE and ROHS COMPLIANT.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4816BDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
5.8A
Drain to Source Resistance
9.3mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
18.5mR
Fall Time
9ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25W
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
18.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
LITTLE FOOT®
Threshold Voltage
3V
Turn-Off Delay Time
31ns
Turn-On Delay Time
13ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4816BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4816BDY-T1-GE3 to view detailed technical specifications.
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