The SI4832DY-T1-E3 is a N-CHANNEL MOSFET from Vishay, featuring a continuous drain current of 6.9A and a drain to source breakdown voltage of 30V. It has a drain to source resistance of 18mR and a fall time of 10ns. The device is packaged in a SO package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageSO
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
Vishay SI4832DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 18mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4832DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4832DY-T1-E3 to view detailed technical specifications.
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