The SI4835DY-T1-E3 is a P-channel JFET from Vishay with a maximum operating temperature range of -55°C to 125°C. It has a continuous drain current of 8A and a gate to source voltage of 25V. The device is packaged in a small outline package with a maximum power dissipation of 2.5W. It is RoHS compliant and available in tape and reel packaging.
PackageSO
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4835DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4835DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4835DY-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.
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