N-channel MOSFET, 12V drain-source breakdown voltage, 17A continuous drain current, and 3mΩ maximum drain-source on-resistance. Features a 35ns turn-on delay time and 190ns turn-off delay time, with 115ns fall time. Surface mountable in an 8-pin SOIC N package, operating from -55°C to 150°C with 1.6W maximum power dissipation. RoHS compliant and lead-free.
PackageSOIC N
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Vishay SI4836DY-T1-E3 technical specifications.
General
| Package/Case | SOIC N |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 3mR |
| Fall Time | 115ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 190ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4836DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4836DY-T1-E3 to view detailed technical specifications.
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