N-channel, small-signal MOSFET for general-purpose applications. Features a 12V drain-to-source breakdown voltage and a maximum continuous drain current of 17A. Offers a low drain-source on-resistance of 3mR. Operates within a temperature range of -55°C to 150°C and is housed in a surface-mount SO package. RoHS compliant and supplied on tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Vishay SI4838DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
12V
Drain to Source Resistance
3mR
Drain to Source Voltage (Vdss)
12V
Drain-source On Resistance-Max
3mR
Fall Time
70ns
Gate to Source Voltage (Vgs)
8V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Nominal Vgs
600mV
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
3mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
140ns
Turn-On Delay Time
40ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4838DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4838DY-T1-E3 to view detailed technical specifications.
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