N-channel Silicon TrenchFET® power MOSFET featuring 40V drain-source breakdown voltage and 10A continuous drain current. This surface-mount device offers a low 9mΩ drain-to-source on-resistance and a maximum power dissipation of 1.56W. Operating across a temperature range of -55°C to 150°C, it boasts fast switching speeds with a 15ns turn-on delay and 50ns turn-off delay. Packaged in an MS-012 (SOP-8) footprint, this RoHS compliant component is supplied on tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.56W
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Technical Specifications
Vishay SI4840DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 1.56W |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 40V |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4840DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4840DY-T1-E3 to view detailed technical specifications.
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