N-channel MOSFET, surface mount, in an SO package. Features 30V drain-source voltage, 28A continuous drain current, and 4.2mΩ drain-source resistance. Operates from -55°C to 150°C with a maximum power dissipation of 6.25W. Includes 3.65nF input capacitance, 125ns turn-on delay, and 38ns turn-off delay. RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4842BDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
28A
Drain to Source Resistance
4.2mR
Drain to Source Voltage (Vdss)
30V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
3.65nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4.2mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
38ns
Turn-On Delay Time
125ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4842BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4842BDY-T1-GE3 to view detailed technical specifications.
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