N-channel MOSFET with 60V drain-to-source breakdown voltage and 6A continuous drain current. Features 22mΩ on-state resistance at a nominal 3V gate-to-source voltage, with a maximum power dissipation of 1.7W. Operates across a temperature range of -55°C to 150°C, packaged in an SO case for surface-mount applications. Turn-on and fall times are 10ns, with a turn-off delay of 25ns.
PackageSO
Voltage60V
Current6A
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4850EY technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 6A |
| Current | 6A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | 60V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| On-State Resistance | 31mR |
| Package Quantity | 100 |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.7W |
| RoHS Compliant | No |
| Series | SI4 |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Voltage | 60V |
| Weight | 0.002998oz |
| Width | 4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI4850EY Datasheet
Download the complete datasheet for Vishay SI4850EY to view detailed technical specifications.
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