
N-channel MOSFET, 60V Vdss, 6A continuous drain current, and 22mΩ Rds On. Features 10ns turn-on and fall times, 25ns turn-off delay, and a maximum power dissipation of 1.7W. Operates within a temperature range of -55°C to 175°C. Packaged in an 8-SOIC surface-mount case, this component is supplied on tape and reel.
Vishay SI4850EY-T1 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 22mR |
| RoHS Compliant | No |
| Series | TrenchFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
| Weight | 0.01787oz |
| Width | 4mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay SI4850EY-T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
