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Technical Specifications
Vishay Si4850EY-T1-E3 technical specifications.
General
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
TrenchFET
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
6A
Maximum Gate Threshold Voltage
3V
Maximum Drain Source Resistance
22@10VmOhm
Typical Gate Charge @ Vgs
18@10VnC
Typical Gate Charge @ 10V
18nC
Maximum Power Dissipation
3300mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Typical Output Capacitance
110pF
Pin Count
8
Package/Case
SOIC N
Package Family Name
SOP
Compliance
RoHS
Yes
RoHS Version
2011/65/EU, 2015/863
Datasheet
Vishay Si4850EY-T1-E3 Datasheet
Download the complete datasheet for Vishay Si4850EY-T1-E3 to view detailed technical specifications.
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