N-channel, small-signal MOSFET featuring a 60V drain-source voltage and 6A continuous drain current. This surface-mount device offers a low 22mΩ drain-to-source resistance (Rds On) and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 10ns turn-on delay and 12ns fall time. Packaged in a compact SOIC (SOP-8) format, this component is designed for general-purpose applications.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4850EY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| Reach SVHC Compliant | No |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4850EY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4850EY-T1-GE3 to view detailed technical specifications.
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