N-channel, small-signal MOSFET featuring a 60V drain-source voltage and 6A continuous drain current. This surface-mount device offers a low 22mΩ drain-to-source resistance (Rds On) and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 10ns turn-on delay and 12ns fall time. Packaged in a compact SOIC (SOP-8) format, this component is designed for general-purpose applications.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4850EY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6A
Drain to Source Resistance
22mR
Drain to Source Voltage (Vdss)
60V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
22mR
Reach SVHC Compliant
No
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4850EY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4850EY-T1-GE3 to view detailed technical specifications.
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