N-channel MOSFET, surface mount, designed for general-purpose small signal applications. Features a continuous drain current of 14A and a drain-to-source breakdown voltage of 20V. Offers a low drain-source on-resistance of 5mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.6W. Packaged in tape and reel, this RoHS compliant component is supplied in an SOP-8 package.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
Vishay SI4876DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
5mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
34mR
Fall Time
30ns
Gate to Source Voltage (Vgs)
12V
Height
0.061inch
Lead Free
Lead Free
Length
0.196inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
3.6W
Rds On Max
5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
175ns
Turn-On Delay Time
40ns
DC Rated Voltage
20V
Width
0.157inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI4876DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4876DY-T1-E3 to view detailed technical specifications.
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