
N-channel MOSFET, surface mount, designed for general-purpose small signal applications. Features a continuous drain current of 14A and a drain-to-source breakdown voltage of 20V. Offers a low drain-source on-resistance of 5mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.6W. Packaged in tape and reel, this RoHS compliant component is supplied in an SOP-8 package.
Vishay SI4876DY-T1-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 34mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.061inch |
| Lead Free | Lead Free |
| Length | 0.196inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 3.6W |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 175ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 20V |
| Width | 0.157inch |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI4876DY-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
