N-channel MOSFET, TrenchFET® series, for general purpose small signal applications. Features 30V drain-source voltage, 16.5A continuous drain current, and a low 9mΩ drain-source on-resistance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 4.45W. Packaged in a RoHS compliant, surface-mount SOP-8 package.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4884BDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
16.5A
Drain to Source Resistance
9mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
9mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
1.525nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.45W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
9mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
22ns
Turn-On Delay Time
8ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4884BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4884BDY-T1-GE3 to view detailed technical specifications.
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