N-channel MOSFET with 30V drain-source voltage and 13A continuous drain current. Features low on-state resistance of 10mR (13.5mR typical) and 2.95W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. This SMD/SMT component is housed in a compact SO package, measuring 5mm in length, 4mm in width, and 1.55mm in height.
PackageSO
PolarityN-CHANNEL
Power1.56W
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Technical Specifications
Vishay SI4886DY technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
13A
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.95W
Nominal Vgs
800mV
Number of Channels
1
On-State Resistance
13.5mR
Package Quantity
100
Polarity
N-CHANNEL
Power Dissipation
1.56W
RoHS Compliant
No
Series
SI4
Termination
SMD/SMT
Turn-Off Delay Time
42ns
Turn-On Delay Time
14ns
Weight
0.002998oz
Width
4mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI4886DY Datasheet
Download the complete datasheet for Vishay SI4886DY to view detailed technical specifications.
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